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NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408)
Description: The NTE2409 is a silicon PNP general purpose transistor in a SOT-23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TA = +60C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Thermal Resistance, Tab-to-Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W Thermal Resistance, Soldering Points-to-Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Collector Cutoff Current Base-Emitter Voltage Collector-Emitter Saturation Voltage Symbol ICBO VBE VCE(sat) Test Conditions VCB = 30V, IE = 0 VCB = 30V, IE = 0, TJ = +150C VCE = 5V, IC = 2mA, Note 2 VCE = 5V, IC = 10mA, Note 2 IC = 10mA, IB = 0.5mA, Note 3 IC = 100mA, IB = 5mA, Note 3 Min - - 600 - - - Typ 1 - 650 - 75 250 Max 15 4 750 820 300 650 Unit nA A mV mV mV mV
Note 2. VBE decreases by about 2mV/K with increasing temperature. Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified)
Parameter Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Capacitance Small-Signal Current Gain Noise Figure Symbol VBE(sat) hFE fT Cc hfe NF Test Conditions IC = 10mA, IB = 0.5mA, Note 3 IC = 100mA, IB = 5mA, Note 3 VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA, f = 35MHz VCB = 10V, IE = Ie = 0, f = 1MHz VCE = 5V, IC = 2mA VCE = 5V, IC = 200A, f = 1kHz, B = 200Hz, RS = 2k Min - - 220 - - 75 - Typ 700 850 - 150 4.5 - 2 Max - - 475 - - 900 10 dB MHz pF Unit mV mV
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
.016 (0.48)
C B E
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3)
.043 (1.1)
.007 (0.2)

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